?20 10 fairchild semiconductor corporation 1 www.fairchildsemi.com fdd6n50 tm_f085 r ev . c1 fdd6n50 tm_f085 50 0v n-channel mosfet fdd6n50tm_f085 500v n-channel mosfet features ? 6a, 500v , r ds(on ) = 0.9 ? @v gs = 10 v ? low gate charge ( typical 12.8 nc) ?low c rss ( typical 9 pf) description these n- channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies and active power factor correction. d-pak gs d d g s absolute maximum ratings symbol parameter ratings unit v dss drain-s ource voltage 500 v i d drain cu rren t - continuous (t c = 25 c) - continuous ( t c = 100 c) 6 3.8 a a i dm drain cu rren t - pulsed (note 1) 24 a v gss gate-source voltage 30 v e as single pulsed a valanche energy (note 2 ) 270 mj i ar avalanch e curr ent (note 1 ) 6 a e ar repetitive avalanche ener gy (note 1 ) 8.9 mj dv/dt peak diode recove ry dv/d t (note 3 ) 4.5 v/ns p d power dissipa tion (t c = 25c) - derate above 25 c 89 0.71 w w/ c t j, t stg operating and storage t e mperature range -55 to +150 c t l maximum lead temp eratur e for soldering purpose, 1/8? from case for 5 seconds 300 c thermal characteristics symbol parameter min. max. un it r jc thermal resistance, junction- to-case -- 1.4 c/w r ja thermal resistance, junction- to-ambient -- 83 c/w ? 100% avalanche teste d ? improved dv/dt capability ?fast switching ?rohs compliant ? qualified to aec q101 november 201 0
2 www.fairchildsemi.com fdd6n50 tm_f085 r ev . c1 package marking and ordering information device m arking device package reel size tape width quantity fdd6n50 fdd6n50tm _f085 d-p ak 380mm 16mm 2500 electrical characteristics t c = 25c unl ess otherwise noted symbol parameter condit i ons min. typ. max units off ch aracte ristics bv dss drain- s ource breakdown voltage v gs = 0v , i d = 250 a 500 -- -- v ? bv dss / ? t j breakdown voltage t emper ature coefficient i d = 250 a, referenced to 25 c -- 0.5 -- v/ c i dss zero gate volt age drain current v ds = 500v, v gs = 0v v ds = 400v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forw ard v gs = 30v , v ds = 0v -- -- 100 na i gssr gate-body leakage current, reve rse v gs = -30v , v ds = 0v -- -- -100 na on characterist i cs v gs(th) gate threshold v olt age v ds = v gs , i d = 250 a 3. 0 -- 5.0 v r ds(on) static dr ain- source on-resistance v gs = 10v , i d = 3a -- 0.76 0.9 ? g fs forward t ransconductance v ds = 40v, i d = 3a (note 4) -- 2.5 -- s dynamic ch aracte ristics c iss input capacit ance v ds = 25v, v gs = 0v, f = 1.0mhz -- 720 940 pf c oss output capacit ance -- 95 190 pf c rss reverse transfer c ap acitance -- 9 13.5 pf switching characteristics t d(on) turn - on delay time v dd = 2 50v , i d = 6a r g = 25? (note 4, 5) -- 6 20 ns t r turn - on rise time -- 55 120 ns t d(of f) turn - off delay time -- 25 60 ns t f turn - off fall time -- 35 80 ns q g tot a l gate charge v ds = 400v, i d = 6a v gs = 10v (note 4, 5) -- 12.8 16.6 nc q gs gate-source charge -- 3.7 -- nc q gd gate-drain charge -- 5.8 -- nc drain-sou r ce diode characteristics and maximum ratings i s maximum continuous d r ain-source diode forward current -- -- 6 a i sm maximum pulsed drain-sou r ce diode forward current -- -- 24 a v sd drain- s ource diode forward voltage v gs = 0v , i s = 6a -- -- 1.4 v t rr rever s e recover y time v gs = 0v , i s = 6 a di f /dt =100a / s (note 4) -- 275 -- ns q rr reverse recovery charge -- 1.7 -- c notes: 1. repetitive ra ting: pulse width limit ed by maximum junction temperature 2. i as = 6a, v dd = 50v, l=13.5mh, r g = 25 ? , startin g t j = 25 c 3. i sd 6a, di/dt 200a/ s, v dd bv dss , star ting t j = 25 c 4. pu lse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics fdd6n50 tm_f085 50 0v n-channel mosfet
typical performance characteristics figu re 1. on- region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 24681 0 10 -2 10 -1 10 0 10 1 note 1. v ds = 40v 2. 250 s pulse t est -55 15 0 25 i d , dr ain current [a] v gs , gate- s ource voltage [v] 0 1 02 03 04 05 0 0 5 10 15 20 v gs top : 10 .0 v 8.0v 7.5 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v notes : 1. 250 s puls e t est 2. t c = 25 i d , drain cu rrent [a] v ds , drai n- source voltage [v] 0 5 10 15 20 0.0 0.5 1.0 1. 5 2. 0 2.5 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ],dr ain- source on-resistance i d , drai n current [a] 0.20. 4 0.60.81.01.21.41.61.8 10 -1 10 0 10 1 25 150 notes : 1. v gs = 0v 2. 2 5 0 s pulse t est i dr , reverse dr ain cu rrent [a] v sd , sour c e-drain voltage [v] 10 0 10 1 10 100 1000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2 . f = 1 mhz c rss c oss c iss capacit ance [pf] v ds , drai n -source voltage [v] 051 01 5 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i d = 6a v gs , gate-source vo ltage [v] q g , total g a te charge [nc] fdd6n50 tm_f085 50 0v n-channel mosfet 3 www.fairchildsemi.com fdd6n50 tm_f085 r ev . c1
typical performance characteristics (co n tinued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 - 50 0 50 100 150 200 0.8 0.9 1. 0 1. 1 1.2 ? note s : 1. v gs = 0 v 2. i d = 250 a bv dss , (norma l ized) drain-source breakdown voltage t j , junc t ion temperature [ o c] -100 - 50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? notes : 1. v gs = 10 v 2. i d = 3 a r ds(o n) , (n or malized) drain-source on-resistance t j , j unct ion temperature [ o c] 25 50 75 100 125 150 0 2 4 6 8 i d , dr ain current [a] t c , case t e mperature [ ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 us ope r ation in this area is limited by r ds(on) dc 10 ms 1 ms 100 us note s : 1. t c = 25 o c 2. t j = 150 o c 3. s ingle p ulse i d , drain current [a ] v ds , drai n-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 note s : 1. z p jc (t) = 1 . 4 /w m ax. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z p jc (t) singl e pulse d=0. 5 0.02 0.2 0.05 0.1 0.01 z p jc (t), th e rmal response t 1 , sq uar e w ave pulse duration [sec] t 1 p dm t 2 fdd6n50 tm_f085 500v n-channel mosfet 4 www.fairc h ildsemi.com fdd6n50 tm_f085 rev . c1
gate charge t est circuit & waveform resistive switching test circuit & waveforms unclamped inductive switch ing test circuit & waveforms fdd6n50 tm_f085 50 0v n-channel mosfet 5 www.fairchildsemi.com fdd6n50 tm_f085 rev . c1
pe ak diode recover y dv/d t test circuit & waveforms fdd6n50 tm_f085 500v n-channel mosfet 6 www.fairc h ildsemi.com fdd6n50 tm_f085 rev . c1
mechanical dimensions d-pak dimensions in millimeters fdd6n50 tm_f085 500v n-channel mosfet 7 www.fairchildsemi.com fdd6n50 tm_f085 rev . c1
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